DIODE GEN PURP 150V 850MA AXIAL 1N6075
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Description:
DIODE GEN PURP 150V 850MA AXIAL
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Parameters
Capacitance at different Vr and F
Current - reverse leakage at different Vr
Current average rectification (Io)
Reverse recovery time (trr)
Rapid recovery=< 500ns,> 200mA(Io)
Supplier device packaging
Voltage DC reverse (Vr) (maximum)
Voltage at different If - forward (Vf)
DataSheet
1N6075（Diode rectifier）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory4140,Price reference "real-time change" China/Hongkong。 1N6075 package/specs, Download 1N6075、Datasheet。
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